Semiconductor device and method of manufacture

ABSTRACT

A semiconductor device and method that utilize a surface device are provided. In an embodiment a fuse line comprises an underbump metallization which has two separate, electrically isolated parts. The two parts are bridged by an external connector, such as a solder ball in order to electrically connect the surface device. When, after testing, the surface device is determined to be defective, the fuse line may be disconnected by removing the external connector from the two separate parts, electrically isolating the surface device. In another embodiment the surface is located beneath a package within an integrated fan out package or is part of a multi-fan out package.

BACKGROUND

Semiconductor devices are used in a variety of electronic applications,such as personal computers, cell phones, digital cameras, and otherelectronic equipment, as examples. Semiconductor devices are typicallyfabricated by sequentially depositing insulating or dielectric layers,conductive layers, and semiconductive layers of material over asemiconductor substrate, and patterning the various material layersusing lithography to form circuit components and elements thereon.Dozens or hundreds of integrated circuits are typically manufactured ona single semiconductor wafer. The individual dies are singulated bysawing the integrated circuits along a scribe line. The individual diesare then packaged separately, in multi-chip modules, or in other typesof packaging, for example.

The semiconductor industry continues to improve the integration densityof various electronic components (e.g., transistors, diodes, resistors,capacitors, etc.) by continual reductions in minimum feature size, whichallow more components to be integrated into a given area. These smallerelectronic components such as integrated circuit dies may also utilizesmaller packages that utilize less area than packages of the past, insome applications.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 illustrates a formation of vias in accordance with someembodiments.

FIG. 2 illustrates a first semiconductor device in accordance with someembodiments.

FIG. 3 illustrates a placement of the first semiconductor device and asecond semiconductor device in accordance with some embodiments.

FIG. 4 illustrates an encapsulation in accordance with some embodiments.

FIGS. 5A-5B illustrate a formation of terminal underbump metallizationsin accordance with some embodiments.

FIGS. 6A-6B illustrate a placement of external connections in accordancewith some embodiments.

FIG. 7 illustrates a testing of a surface device in accordance with someembodiments.

FIGS. 8A-8B illustrate a removal of an external connection in accordancewith some embodiments.

FIG. 9 illustrates a patterning of a polymer layer in accordance withsome embodiments.

FIG. 10 illustrates a bonding of a package in accordance with someembodiments.

FIG. 11 illustrates a singulation process in accordance with someembodiments.

FIGS. 12A-12B illustrate an embodiment in which multiple externalconnections are removed in accordance with some embodiments.

FIGS. 13A-13B illustrate an embodiment in which a terminal underbumpmetallization has a smaller dimension than another underbumpmetallization in accordance with some embodiments.

FIG. 14 illustrates a top down view of one embodiment of a surfacedevice in accordance with some embodiments.

FIG. 15 illustrates an embodiment in which the surface device is bondedthrough the polymer layer in accordance with some embodiments.

FIGS. 16A-16B illustrate a bonding of a package when the surface deviceis bonded through the polymer layer in accordance with some embodiments.

FIGS. 17A-17B illustrate a patterning of a substrate to accommodate thesurface device in accordance with some embodiments.

FIG. 18 illustrates a singulation process in accordance with someembodiments.

FIG. 19 illustrates a multi-fan out process in accordance with someembodiments.

FIG. 20 illustrates a placement of a surface device in the multi-fan outprocess in accordance with some embodiments.

FIG. 21 illustrates a singulation in the multi-fan out process inaccordance with some embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the invention. Specificexamples of components and arrangements are described below to simplifythe present disclosure. These are, of course, merely examples and arenot intended to be limiting. For example, the formation of a firstfeature over or on a second feature in the description that follows mayinclude embodiments in which the first and second features are formed indirect contact, and may also include embodiments in which additionalfeatures may be formed between the first and second features, such thatthe first and second features may not be in direct contact. In addition,the present disclosure may repeat reference numerals and/or letters inthe various examples. This repetition is for the purpose of simplicityand clarity and does not in itself dictate a relationship between thevarious embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

With reference now to FIG. 1, there is shown a carrier substrate 101with an adhesive layer 103, a polymer layer 105, and a first seed layer107 over the carrier substrate 101. The carrier substrate 101 comprises,for example, silicon based materials, such as glass or silicon oxide, orother materials, such as aluminum oxide, combinations of any of thesematerials, or the like. The carrier substrate 101 is planar in order toaccommodate an attachment of semiconductor devices such as a firstsemiconductor device 201 and a second semiconductor device 301 (notillustrated in FIG. 1 but illustrated and discussed below with respectto FIGS. 2-3).

The adhesive layer 103 is placed on the carrier substrate 101 in orderto assist in the adherence of overlying structures (e.g., the polymerlayer 105). In an embodiment the adhesive layer 103 may comprise anultra-violet glue, which loses its adhesive properties when exposed toultra-violet light. However, other types of adhesives, such as pressuresensitive adhesives, radiation curable adhesives, epoxies, combinationsof these, or the like, may also be used. The adhesive layer 103 may beplaced onto the carrier substrate 101 in a semi-liquid or gel form,which is readily deformable under pressure.

The polymer layer 105 is placed over the adhesive layer 103 and isutilized in order to provide protection to, e.g., the firstsemiconductor device 201 and the second semiconductor device 301 oncethe first semiconductor device 201 and the second semiconductor device301 have been attached. In an embodiment the polymer layer 105 may bepolybenzoxazole (PBO), although any suitable material, such as polyimideor a polyimide derivative, Solder Resistance (SR), or Ajinomoto build-upfilm (ABF) may be utilized. The polymer layer 105 may be placed using,e.g., a spin-coating process to a thickness of between about 2 μm andabout 15 μm, such as about 5 μm, although any suitable method andthickness may be used.

The first seed layer 107 is formed over the polymer layer 105. In anembodiment the first seed layer 107 is a thin layer of a conductivematerial that aids in the formation of a thicker layer during subsequentprocessing steps. The first seed layer 107 may comprise a layer oftitanium about 1,000 Å thick followed by a layer of copper about 5,000 Åthick. The first seed layer 107 may be created using processes such assputtering, evaporation, or PECVD processes, depending upon the desiredmaterials. The first seed layer 107 may be formed to have a thickness ofbetween about 0.3 μm and about 1 μm, such as about 0.5 μm.

FIG. 1 also illustrates a placement and patterning of a photoresist 109over the first seed layer 107. In an embodiment the photoresist 109 maybe placed on the first seed layer 107 using, e.g., a spin coatingtechnique to a height of between about 50 μm and about 250 μm, such asabout 120 μm. Once in place, the photoresist 109 may then be patternedby exposing the photoresist 109 to a patterned energy source (e.g., apatterned light source) so as to induce a chemical reaction, therebyinducing a physical change in those portions of the photoresist 109exposed to the patterned light source. A developer is then applied tothe exposed photoresist 109 to take advantage of the physical changesand selectively remove either the exposed portion of the photoresist 109or the unexposed portion of the photoresist 109, depending upon thedesired pattern.

In an embodiment the pattern formed into the photoresist 109 is apattern for first vias 111. The first vias 111 are formed in such aplacement as to be located on different sides of subsequently attacheddevices such as the first semiconductor device 201 and the secondsemiconductor device 301. However, any suitable arrangement for thepattern of first vias 111, such as by being located such that the firstsemiconductor device 201 and the second semiconductor device 301 areplaced on opposing sides of the first vias 111, may be utilized.

Once the photoresist has been patterned, the first vias 111 are formedwithin the photoresist 109. In an embodiment the first vias 111 compriseone or more conductive materials, such as copper, tungsten, otherconductive metals, or the like, and may be formed, for example, byelectroplating, electroless plating, or the like. In an embodiment, anelectroplating process is used wherein the first seed layer 107 and thephotoresist 109 are submerged or immersed in an electroplating solution.The first seed layer 107 surface is electrically connected to thenegative side of an external DC power supply such that the first seedlayer 107 functions as the cathode in the electroplating process. Asolid conductive anode, such as a copper anode, is also immersed in thesolution and is attached to the positive side of the power supply. Theatoms from the anode are dissolved into the solution, from which thecathode, e.g., the first seed layer 107, acquires the dissolved atoms,thereby plating the exposed conductive areas of the first seed layer 107within the opening of the photoresist 109.

Once the first vias 111 have been formed using the photoresist 109 andthe first seed layer 107, the photoresist 109 may be removed using asuitable removal process (not illustrated in FIG. 1 but seen in FIG. 3below). In an embodiment, a plasma ashing process may be used to removethe photoresist 109, whereby the temperature of the photoresist 109 maybe increased until the photoresist 109 experiences a thermaldecomposition and may be removed. However, any other suitable process,such as a wet strip, may be utilized. The removal of the photoresist 109may expose the underlying portions of the first seed layer 107.

Once exposed a removal of the exposed portions of the first seed layer107 may be performed (not illustrated in FIG. 1 but seen in FIG. 3below). In an embodiment the exposed portions of the first seed layer107 (e.g., those portions that are not covered by the first vias 111)may be removed by, for example, a wet or dry etching process. Forexample, in a dry etching process reactants may be directed towards thefirst seed layer 107 using the first vias 111 as masks. In anotherembodiment, etchants may be sprayed or otherwise put into contact withthe first seed layer 107 in order to remove the exposed portions of thefirst seed layer 107. After the exposed portion of the first seed layer107 has been etched away, a portion of the polymer layer 105 is exposedbetween the first vias 111.

FIG. 2 illustrates a first semiconductor device 201 that will beattached to the polymer layer 105 within the first vias 111 (notillustrated in FIG. 2 but illustrated and described below with respectto FIG. 3). In an embodiment the first semiconductor device 201 comprisea first substrate 203, first active devices (not individuallyillustrated), first metallization layers 205, first contact pads 207, afirst passivation layer 211, and first external connectors 209. Thefirst substrate 203 may comprise bulk silicon, doped or undoped, or anactive layer of a silicon-on-insulator (SOI) substrate. Generally, anSOI substrate comprises a layer of a semiconductor material such assilicon, germanium, silicon germanium, SOI, silicon germanium oninsulator (SGOI), or combinations thereof. Other substrates that may beused include multi-layered substrates, gradient substrates, or hybridorientation substrates.

The first active devices comprise a wide variety of active devices andpassive devices such as capacitors, resistors, inductors and the likethat may be used to generate the desired structural and functionalparameters of the design for the first semiconductor device 201. Thefirst active devices may be formed using any suitable methods eitherwithin or else on the first substrate 203.

The first metallization layers 205 are formed over the first substrate203 and the first active devices and are designed to connect the variousactive devices to form functional circuitry. In an embodiment the firstmetallization layers 205 are formed of alternating layers of dielectricand conductive material and may be formed through any suitable process(such as deposition, damascene, dual damascene, etc.). In an embodimentthere may be four layers of metallization separated from the firstsubstrate 203 by at least one interlayer dielectric layer (ILD), but theprecise number of first metallization layers 205 is dependent upon thedesign of the first semiconductor device 201.

The first contact pads 207 may be formed over and in electrical contactwith the first metallization layers 205. The first contact pads 207 maycomprise aluminum, but other materials, such as copper, may be used. Thefirst contact pads 207 may be formed using a deposition process, such assputtering, to form a layer of material (not shown) and portions of thelayer of material may then be removed through a suitable process (suchas photolithographic masking and etching) to form the first contact pads207. However, any other suitable process may be utilized to form thefirst contact pads 207. The first contact pads may be formed to have athickness of between about 0.5 μm and about 4 μm, such as about 1.45 μm.

The first passivation layer 211 may be formed on the first substrate 203over the first metallization layers 205 and the first contact pads 207.The first passivation layer 211 may be made of one or more suitabledielectric materials such as silicon oxide, silicon nitride, low-kdielectrics such as carbon doped oxides, extremely low-k dielectricssuch as porous carbon doped silicon dioxide, combinations of these, orthe like. The first passivation layer 211 may be formed through aprocess such as chemical vapor deposition (CVD), although any suitableprocess may be utilized, and may have a thickness between about 0.5 μmand about 5 μm, such as about 9.25 KÅ.

The first external connectors 209 may be formed to provide conductiveregions for contact between the first contact pads 207 and, e.g., afirst redistribution layer 501 (not illustrated in FIG. 2 butillustrated and described below with respect to FIG. 5). In anembodiment the first external connectors 209 may be conductive pillarsand may be formed by initially forming a photoresist (not shown) overthe first passivation layer 211 to a thickness between about 5 μm toabout 20 μm, such as about 10 μm. The photoresist may be patterned toexpose portions of the first passivation layer 211 through which theconductive pillars will extend. Once patterned, the photoresist may thenbe used as a mask to remove the desired portions of the firstpassivation layer 211, thereby exposing those portions of the underlyingfirst contact pads 207 to which the first external connectors 209 willmake contact.

The first external connectors 209 may be formed within the openings ofboth the first passivation layer 211 and the photoresist. The firstexternal connectors 209 may be formed from a conductive material such ascopper, although other conductive materials such as nickel, gold, ormetal alloy, combinations of these, or the like may also be used.Additionally, the first external connectors 209 may be formed using aprocess such as electroplating, by which an electric current is runthrough the conductive portions of the first contact pads 207 to whichthe first external connectors 209 are desired to be formed, and thefirst contact pads 207 are immersed in a solution. The solution and theelectric current deposit, e.g., copper, within the openings in order tofill and/or overfill the openings of the photoresist and the firstpassivation layer 211, thereby forming the first external connectors209. Excess conductive material and photoresist outside of the openingsof the first passivation layer 211 may then be removed using, forexample, an ashing process, a chemical mechanical polish (CMP) process,combinations of these, or the like.

However, as one of ordinary skill in the art will recognize, the abovedescribed process to form the first external connectors 209 is merelyone such description, and is not meant to limit the embodiments to thisexact process. Rather, the described process is intended to be merelyillustrative, as any suitable process for forming the first externalconnectors 209 may be utilized. All suitable processes are fullyintended to be included within the scope of the present embodiments.

FIG. 3 illustrates a placement of the first semiconductor device 201onto the polymer layer 105 along with a placement of a secondsemiconductor device 301. In an embodiment the second semiconductordevice 301 may comprise a second substrate 303, second active devices(not individually illustrated), second metallization layers 305, secondcontact pads 307, a second passivation layer 311, and second externalconnectors 309. In an embodiment the second substrate 303, the secondactive devices, the second metallization layers 305, the second contactpads 307, the second passivation layer 311, and the second externalconnectors 309 may be similar to the first substrate 203, the firstactive devices, the first metallization layers 205, the first contactpads 207, the first passivation layer 211, and the first externalconnectors 209, although they may also be different.

In an embodiment the first semiconductor device 201 and the secondsemiconductor device 301 may be placed onto the polymer layer 105 using,e.g., a pick and place process. However, any other alternative method ofplacing the first semiconductor device 201 and the second semiconductordevice 301 may be used to place the first semiconductor device 201 andthe second semiconductor device 301 onto the polymer layer 105 andwithin the first vias 111.

FIG. 4 illustrates an encapsulation of the first vias 111, the firstsemiconductor device 201 and the second semiconductor device 301. Theencapsulation may be performed in a molding device (not individuallyillustrated in FIG. 4), which may comprise a top molding portion and abottom molding portion separable from the top molding portion. When thetop molding portion is lowered to be adjacent to the bottom moldingportion, a molding cavity may be formed for the carrier substrate 101,the first vias 111, the first semiconductor device 201, and the secondsemiconductor device 301.

During the encapsulation process the top molding portion may be placedadjacent to the bottom molding portion, thereby enclosing the carriersubstrate 101, the first vias 111, the first semiconductor device 201,and the second semiconductor device 301 within the molding cavity. Onceenclosed, the top molding portion and the bottom molding portion mayform an airtight seal in order to control the influx and outflux ofgasses from the molding cavity. Once sealed, a first encapsulant 401 maybe placed within the molding cavity. The first encapsulant 401 may be amolding compound resin such as polyimide, PPS, PEEK, PES, a heatresistant crystal resin, combinations of these, or the like. The firstencapsulant 401 may be placed within the molding cavity prior to thealignment of the top molding portion and the bottom molding portion, orelse may be injected into the molding cavity through an injection port.

Once the first encapsulant 401 has been placed into the molding cavitysuch that the first encapsulant 401 encapsulates the carrier substrate101, the first vias 111, the first semiconductor device 201, and thesecond semiconductor device 301, the first encapsulant 401 may be curedin order to harden the first encapsulant 401 for optimum protection.While the exact curing process is dependent at least in part on theparticular material chosen for the first encapsulant 401, in anembodiment in which molding compound is chosen as the first encapsulant401, the curing could occur through a process such as heating the firstencapsulant 401 to between about 100° C. and about 130° C., such asabout 125° C. for about 60 sec to about 3000 sec, such as about 600 sec.Additionally, initiators and/or catalysts may be included within thefirst encapsulant 401 to better control the curing process.

However, as one having ordinary skill in the art will recognize, thecuring process described above is merely an exemplary process and is notmeant to limit the current embodiments. Other curing processes, such asirradiation or even allowing the first encapsulant 401 to harden atambient temperature, may be used. Any suitable curing process may beused, and all such processes are fully intended to be included withinthe scope of the embodiments discussed herein.

FIG. 4 also illustrates a thinning of the first encapsulant 401 in orderto expose the first vias 111, the first semiconductor device 201, andthe second semiconductor device 301 for further processing. The thinningmay be performed, e.g., using a mechanical grinding or chemicalmechanical polishing (CMP) process whereby chemical etchants andabrasives are utilized to react and grind away the first encapsulant401, the first semiconductor device 201 and the second semiconductordevice 301 until the first vias 111, the first external connectors 209(on the first semiconductor device 201), and the second externalconnectors 309 (on the second semiconductor device 301) have beenexposed. As such, the first semiconductor device 201, the secondsemiconductor device 301, and the first vias 111 may have a planarsurface that is also planar with the first encapsulant 401.

However, while the CMP process described above is presented as oneillustrative embodiment, it is not intended to be limiting to theembodiments. Any other suitable removal process may be used to thin thefirst encapsulant 401, the first semiconductor device 201, and thesecond semiconductor device 301 and expose the first vias 111. Forexample, a series of chemical etches may be utilized. This process andany other suitable process may be utilized to thin the first encapsulant401, the first semiconductor device 201, and the second semiconductordevice 301, and all such processes are fully intended to be includedwithin the scope of the embodiments.

Optionally, after the first encapsulant 401 has been thinned, the firstvias 111 and the first external connectors 209 may be recessed withinthe first encapsulant 401. In an embodiment the first vias 111 and thefirst external connectors 209 may be recessed using, e.g., an etchingprocess that utilizes an etchant that is selective to the material ofthe first vias 111 and the first external connectors 209 (e.g., copper).The first vias 111 and the first external connectors 209 may be recessedto a depth of between about 20 μm and about 300 μm, such as about 180μm.

FIGS. 5A-5B illustrate a formation of a first redistribution layer (RDL)501 in order to interconnect the first semiconductor device 201, thesecond semiconductor device 301, the first vias 111, third externalconnectors 601, and fourth external connectors 603 (not illustrated inFIG. 5A but illustrated and described below with respect to FIGS.6A-6B), with FIG. 5B being a close-up view of the dashed box 516 in FIG.5A. In an embodiment the first RDL 501 may be formed by initiallyforming a seed layer (not shown) of a titanium copper alloy through asuitable formation process such as CVD or sputtering. A photoresist(also not shown) may then be formed to cover the seed layer, and thephotoresist may then be patterned to expose those portions of the seedlayer that are located where the first RDL 501 is desired to be located.

Once the photoresist has been formed and patterned, a conductivematerial, such as copper, may be formed on the seed layer through adeposition process such as plating. The conductive material may beformed to have a thickness of between about 1 μm and about 10 μm, suchas about 5 μm. However, while the material and methods discussed aresuitable to form the conductive material, these materials are merelyexemplary. Any other suitable materials, such as AlCu or Au, and anyother suitable processes of formation, such as CVD or PVD, may be usedto form the first RDL 501.

Once the conductive material has been formed, the photoresist may beremoved through a suitable removal process such as ashing. Additionally,after the removal of the photoresist, those portions of the seed layerthat were covered by the photoresist may be removed through, forexample, a suitable etch process using the conductive material as amask.

FIG. 5A also illustrates a formation of a third passivation layer 503over the first RDL 501 in order to provide protection and isolation forthe first RDL 501 and the other underlying structures. In an embodimentthe third passivation layer 503 may be polybenzoxazole (PBO), althoughany suitable material, such as polyimide or a polyimide derivative, maybe utilized. The third passivation layer 503 may be placed using, e.g.,a spin-coating process to a thickness of between about 5 μm and about 25μm, such as about 7 μm, although any suitable method and thickness maybe used.

Additionally, while FIG. 5A only illustrates a single first RDL 501 anda single third passivation layer 503, this is done for clarity and isnot intended to limit the embodiments. Rather, the above processes toform the single first RDL 501 and the single third passivation layer 503may be repeated one or more times to form a plurality of electricallyinterconnected RDLs and passivation layers as desired. Any suitablenumber of RDLs may be utilized.

Additionally, after forming the first RDL 501 and the third passivationlayer 503 (and repeating the process as desired to form any suitablenumber of RDLs), a terminal RDL 505 may be formed in electricalconnection with the rest of the structure such as the first RDL 501. Inan embodiment the terminal RDL 505 is formed in order to provide aconductive routing layer that provides electrical connection to externalconnections and devices (such as the surface devices 519, describedfurther below). In an embodiment the terminal RDL 505 is formed usingsimilar materials and processes as the first RDL 501. For example, theterminal RDL 505 may be formed of a material such as copper using aprocess such as electroplating, although any suitable materials andmethods of manufacture may be utilized.

Once the terminal RDL 505 has been formed, a fourth passivation layer509 may be formed over the terminal RDL 505 in order to isolate andprotect the terminal RDL 505. In an embodiment the fourth passivationlayer 509 may be formed of similar material and using similar processesas the third passivation layer 503, such as by being PBO applied using aspin-coating process, although any suitable material and method ofmanufacture may be utilized.

Once the fourth passivation layer 509 has been formed, openings throughthe fourth passivation layer 509 may be formed to expose portions of theterminal RDL 505. In an embodiment the openings through the fourthpassivation layer 509 may be formed using, e.g., a photolithographicmasking and etching process, whereby a photosensitive material isapplied, exposed, and developed to form a mask, and the mask is utilizedalong with an etching process, such as a reactive ion etch, in order toremove exposed portions of the fourth passivation layer 509. However,any suitable exposure process may be used to form the openings throughthe fourth passivation layer 509.

FIG. 5A also illustrates a formation of first underbump metallizations(UBM) 511 and terminal UBMs 513 within the openings through the fourthpassivation layer 509 and in electrical connection with the terminal RDL505. In an embodiment the first UBMs 511 are utilized in order toconnect the package with external devices, such as other packages orother semiconductor devices (not separately illustrated in FIG. 5A)while the terminal UBMs 513 are utilized to provide either connectivityto external devices (similar to the first UBMs 511) but also to form afuse line that may be opened or closed based upon the presence orabsence of the fourth external connectors 603 (not illustrated in FIG.5A but illustrated and described below with respect to FIGS. 6A-6B).

In an embodiment the first UBMs 511 and terminal UBMs 513 may eachcomprise three layers of conductive materials, such as a layer oftitanium, a layer of copper, and a layer of nickel. However, one ofordinary skill in the art will recognize that there are many suitablearrangements of materials and layers, such as an arrangement ofchrome/chrome-copper alloy/copper/gold, an arrangement oftitanium/titanium tungsten/copper, or an arrangement ofcopper/nickel/gold, that are suitable for the formation of the firstUBMs 511 and terminal UBMs 513. Any suitable materials or layers ofmaterial that may be used for the first UBMs 511 and terminal UBMs 513are fully intended to be included within the scope of the embodiments.

In an embodiment the first UBMs 511 and terminal UBMs 513 are created byforming each layer over the terminal RDL 505 and along the interior ofthe openings through the fourth passivation layer 509. The forming ofeach layer may be performed using a plating process, such aselectrochemical plating, although other processes of formation, such assputtering, evaporation, or PECVD process, may be used depending uponthe desired materials. The first UBMs 511 and terminal UBMs 513 may beformed to have a thickness of between about 0.7 μm and about 10 μm, suchas about 5 μm. Additionally, the first UBMs 511 may be formed in acircular shape (in a top down view) that has a diameter with a firstdistance D₁ of between about 150 μm and about 250 μm, although anysuitable shape or dimension may be used.

FIG. 5B illustrates a close-up view of the dashed box 516 in FIG. 5A andprovides a closer look at the terminal UBMs 513. In an embodiment, theterminal UBMs 513 may be formed to also be in a circular shape (whenviewed from the top down). However, in order to function as a fuse line,the terminal UBMs 513 may be formed with a first section 515 and asecond section 517 that are each electrically in contact with separateportions of the terminal RDL 505 but are electrically isolated from eachother so that another connector (such as the fourth external connectors603, discussed further below) may be used to bridge the distance andelectrically connect the first section 515 and the second section 517 toform the fuse line.

In a particular embodiment the first section 515 and the second section517 may each be shaped as half-circles which are complementary to eachother and wherein the half-circles may have a radius with a seconddistance D₂ of between about 100 μm and about 1000 μm. Additionally, asdescribed, the first section 515 and the second section 517 areseparated from each other in order to electrically isolate the firstsection 515 from the second section 517 at this stage of manufacture. Assuch, the first section 515 may be isolated from the second section 517by a third distance D₃ of between about 10 μm and about 50 μm, such asabout 20 μm. However, any suitable shapes, whether complementary or not,and any suitable dimensions, may be utilized to form the first section515 and the second section 517 and form the terminal UBMs 513.

FIGS. 5A-5B also illustrate the placement and bonding of surface devices519 that may be used to provide additional functionality or programmingto the first semiconductor device 201, the second semiconductor device301, or the package as a whole. In an embodiment the surface devices 519may be surface mount devices (SMD) or integrated passive devices (IPD)that comprise passive devices such as resistors, inductors, capacitors,jumpers, combinations of these, or the like that are desired to beconnected to and utilized in conjunction with the first semiconductordevice 201 or the second semiconductor device 301, or other parts of thepackage.

In an embodiment, the surface devices 519 are connected between separatefirst UBMs 511 that connect to separate portions of the terminal RDL505. Additionally, that portion of the terminal RDL 505 that iselectrically connected to one of the surface devices 519 is additionallyconnected to one or more of the terminal UBMs 513 within the fuse linesuch that the surface devices 519 can be, if desired and as discussedfurther below, connected or disconnected from the remainder of thestructure through the use of the terminal UBMs 513.

The surface devices 519 may be connected to the first UBMs 511, forexample, by sequentially dipping connectors such as solder balls of thesurface device 519 into flux, and then using a pick-and-place tool inorder to physically align the connectors of the surface device 519 withindividual ones of the first UBMs 511. In an embodiment in which thesurface devices 519 use connectors such as solder balls, once thesurface devices 519 have been placed a reflow process may be performedin order to physically bond the surface device 519 with the underlyingfirst UBMs 511 and a flux clean may be performed. However, any othersuitable connector or connection process may be utilized, such asmetal-to-metal bonding or the like.

Once the surface devices 519 have been bonded to the first UBMs 511, anunderfill material 521 may be placed between the surface device 519 andthe fourth passivation layer 509 in order to help protect and isolatethe surface device 519 that has been bonded. In an embodiment theunderfill material 521 is a protective material used to cushion andsupport the surface devices 519 from operational and environmentaldegradation, such as stresses caused by the generation of heat duringoperation. The underfill material 521 may be injected or otherwiseformed in the space between the surface devices 519 and the fourthpassivation layer 509 and may, for example, comprise a liquid epoxy thatis dispensed between the surface devices 519 and the fourth passivationlayer 509, and then cured to harden.

FIGS. 6A-6B illustrate a placement of third external connectors 601 ontothe first UBMs 511 and a placement of fourth external connectors 603onto the terminal UBMs 513, with FIG. 6B illustrating a close-up view ofthe dashed box 516 in FIG. 6A. In an embodiment the third externalconnectors 601 and the fourth external connectors 603 may be placed atthe same time and may be, e.g., a ball grid array and may comprise aeutectic material such as solder, although any suitable materials may beused. In an embodiment in which the third external connectors 601 andthe fourth external connectors 603 are solder balls, the third externalconnectors 601 and the fourth external connectors 603 may be formedusing a ball drop method to place the third external connectors 601 andthe fourth external connectors 603 onto the first UBMs 511 and theterminal UBMs 513, such as a direct ball drop process. In anotherembodiment, the third external connectors 601 and the fourth externalconnectors 603 may be formed by initially forming a layer of tin throughany suitable method such as evaporation, electroplating, printing,solder transfer, and then performing a reflow is performed in order toshape the material into the desired bump shape.

By placing the third external connectors 601 onto the first UBMs 511,the third external connectors 601 are physically and electrically inplace to provide an external connection to external devices. Inparticular, by placing external devices in physical connection with thethird external connectors 601 and then performing a reflow, the thirdexternal connectors 601 can physically and electrically bond the packageto another device, as described further below.

Additionally, with the placement of the fourth external connectors 603onto the terminal UBMs 513, the fourth external connectors 603 may, ifdesired, provide a similar external connection as the third externalconnectors 601. However, in addition to providing an externalconnection, the fourth external connectors 603 will also bridge theseparation between the first section 515 of the fourth externalconnectors 603 and the second section 517 of the fourth externalconnectors 603 and act as a switch in order to electrically connect thefirst section 515 to the second section 517. This electrical connectionwill serve to electrically connect the surface device 519 to the rest ofthe package, such as the first semiconductor device 201, the first vias111, and the third external connectors 601, depending upon the desiredrouting of the terminal RDL 505 and the first RDL 501.

Additionally, if desired, the third external connectors 601, the fourthexternal connectors 603, and the surface devices 519 may be placed andbonded using a same process. In particular, in an embodiment in whichthe surface devices 519 use solder to bond to the UBMs 511, the surfacedevices 519, the third external connectors 601, and the fourth externalconnectors 603 may all be placed at the same time and then reflowed atthe same time. By doing a single reflow, process integration and energyefficiencies may be obtained.

FIG. 7 illustrates a test performed on the surface device 519 in orderto determine if the surface device 519 is operable after the placementand bonding and that no other defects, such as a bridge between surfacedevice terminals that may kill the desired functionality, are present.In an embodiment the test may be performed using a test apparatus 701that comprises a first terminal 703 (for, e.g., a power connection) anda second terminal 705 (for, e.g., a ground connection). In an embodimentthe first terminal 703 may be placed in contact with one of the fourthexternal connectors 603 on a first side of the surface device 519 andthe second terminal 705 may be placed in contact with either anotherfourth external connectors 603 on an opposite side (electrically) of thesurface device 519 or in contact electrically with a third externalconnector 601 on an opposite side (electrically) of the surface device519, thereby completing a circuit from the second terminal 705 throughthe surface device 519 and back to the first terminal 703.

With these connections, a current may be applied to the second terminal705 and the current's change through the surface device 519 may bereceived by the first terminal 703 and measured by the test apparatus701. Similarly, a voltage may be applied to the second terminal 705 andthe voltage's change through the surface device 519 may be received bythe first terminal 703 and measured by the test apparatus 701. Thechanges of the current and the voltage through the surface device 519may then be analyzed to determine if there is a defect within thesurface device 519 that may affect the overall electrical performance ofthe surface device 519 and the package in general.

However, as one of ordinary skill in the art will recognize, the twoterminal test to measure both current and voltage is merely oneembodiment and is not intended to limit the embodiments. Any suitabletest using any number of terminals may be utilized. Any combination ofthe number of terminals and the desired tests to be run on the surfacedevice 519 is fully intended to be included within the scope of theembodiments.

FIGS. 8A-8B illustrate an embodiment in which the surface device 519fails the test described above with respect to FIG. 7, in which FIG. 8Billustrates a close-up view of the dashed box 516 in FIG. 8A. In thisembodiment, because the surface device 519 has already been bonded andthe underfill material 521 has been placed and hardened, it is extremelyinefficient to remove and replace the surface device 519. Additionally,because copper lines or traces are relatively large, it is difficult toburn these lines or traces out by a laser. However, there are situationsin which it is acceptable to simply disconnect and deactivate thedefective surface device 519 electrically and move the remainder of thestructure (e.g., the first semiconductor device 201, the first vias 111,etc.) to further processing while the surface device 519 remainsphysically attached.

In such an embodiment, the fourth external connectors 603 may beselectively removed (illustrated by the dashed line that indicated wherethe fourth external connectors 603 were located prior to removal) fromthe terminal UBMs 513 in order to electrically separate the firstsection 515 of the terminal UBMs 513 from the second section 517 of theterminal UBMs 513. Such a removal opens the fuse line that electricallyconnects the surface device 519 from the remainder of the structure andelectrically disconnects the surface device 519. However, the surfacedevice 519 is not physically removed from the structure.

In an embodiment in which the fourth external connectors 603 are solderballs, the desired fourth external connector 603 may be removed using,e.g., a desoldering process whereby the fourth external connector 603 isheated in a selective reflow process and then removed while the fourthexternal connector 603 is in a flowable state. In an embodiment thefourth external connector 603 may be heated to a temperature at which itflows using a heat gun (represented in FIG. 8A by the gun labeled 801)or other selective heating element that can selectively apply heat tothe desired fourth external connector 603 without reflowing adjacentfourth external connectors 603 or adjacent third external connectors601. In an embodiment in which the fourth external connector 603 issolder, the heat gun may be used to increase the temperature above thereflow point, such as above about 225° C.

However, while a heat gun is one tool that may be used to reflow thefourth external connector 603 for removal, this is intended to beillustrative only and is not intended to be limiting. Rather, anysuitable device or method, or combination of devices and methods, thatmay be used to selectively reflow the desired fourth external connector603 may also be used. All such devices and methods are fully intended tobe included within the scope of the embodiments.

Once the temperature of the fourth external connector 603 has beenraised to a point where it will reflow, the now flowable fourth externalconnector 603 may be removed from the terminal UBM 513. In an embodimentthe fourth external connector 603 may be removed using a suction pump(represented in FIG. 8 by the tube labeled 803), whereby a tube has oneend in contact with the fourth external connector 603 and another endthat is attached to a suction device to lower the pressure within thetube. With a lowered pressure, the flowable fourth external connector603 is moved into the tube by the pressure difference between theambient atmosphere outside of the tube and the reduced pressure withinthe tube. In an embodiment the pressure within the tube may be reducedto a pressure of between about 0.1 atm and about 1 atm, and the tube mayhave an opening with a diameter of between about 30 μm and about 300 μm.

However, while the suction pump 803 is one such device that may be usedto help remove the fourth external connector 603, this description isintended to be illustrative and is not intended to be limiting. Rather,any suitable device or method, such as a desoldering braid (which usescapillary action to help remove solder) or a sheer mechanical removal,may be used. All such methods and devices are fully intended to beincluded within the scope of the embodiments.

By removing the fourth external connector 603, the surface device 519may be electrically disconnected and isolated from the other componentswithout requiring the costly and inefficient process of physicallydebonding and removing the surface device 519 and underfill material521. As such, a more efficient process may be obtained when a remainderof the structure may still be useful without the surface device 519being connected.

If, however, the test performed with the test apparatus 701 indicatesthat the surface device 519 is fully operational, then the fourthexternal connectors 603 may be left on the terminal UBMs 513. By leavingthe fourth external connectors 603 on the terminal UBMs 513, the fuseline is keep complete. This complete fuse line keeps the surface device519 electrically connected to the remainder of the structures, such asthe first vias 111, the first semiconductor device 201, and/or thesecond semiconductor device 301, as desired.

FIG. 9 illustrates a debonding of the carrier substrate 101 from thefirst semiconductor device 201 and the second semiconductor device 301.In an embodiment the third external connectors 601 and the fourthexternal connectors 603 and, hence, the structure including the firstsemiconductor device 201 and the second semiconductor device 301, may beattached to a ring structure 901. The ring structure 901 may be a metalring intended to provide support and stability for the structure duringand after the debonding process. In an embodiment the third externalconnectors 601, the fourth external connectors 603, the firstsemiconductor device 201, and the second semiconductor device 301 areattached to the ring structure using, e.g., a ultraviolet tape 903,although any other suitable adhesive or attachment may be used.

Once the third external connectors 601 and the fourth externalconnectors 603, and hence, the structure including the firstsemiconductor device 201 and the second semiconductor device 301 areattached to the ring structure 901, the carrier substrate 101 may bedebonded from the structure including the first semiconductor device 201and the second semiconductor device 301 using, e.g., a thermal processto alter the adhesive properties of the adhesive layer 103. In aparticular embodiment an energy source such as an ultraviolet (UV)laser, a carbon dioxide (CO₂) laser, or an infrared (IR) laser, isutilized to irradiate and heat the adhesive layer 103 until the adhesivelayer 103 loses at least some of its adhesive properties. Onceperformed, the carrier substrate 101 and the adhesive layer 103 may bephysically separated and removed from the structure comprising the thirdexternal connectors 601, and the fourth external connectors 603, thefirst semiconductor device 201, and the second semiconductor device 301.

Once the carrier substrate 101 and the adhesive layer 103 have beenremoved, a patterning of the polymer layer 105 may be performed in orderto form first openings 905 and expose the first vias 111 (along with theassociated first seed layer 107). In an embodiment the polymer layer 105may be patterned using, e.g., a laser drilling method. In such a methoda protective layer, such as a light-to-heat conversion (LTHC) layer or ahogomax layer (not separately illustrated in FIG. 9) is first depositedover the polymer layer 105. Once protected, a laser is directed towardsthose portions of the polymer layer 105 which are desired to be removedin order to expose the underlying first vias 111. During the laserdrilling process the drill energy may be in a range from 0.1 mJ to about30 mJ, and a drill angle of about 0 degree (perpendicular to the polymerlayer 105) to about 85 degrees to normal of the polymer layer 105. In anembodiment the patterning may be formed to form first openings 905 overthe first vias 111 to have a first width of between about 100 μm andabout 300 μm, such as about 200 μm.

In another embodiment, the polymer layer 105 may be patterned byinitially applying a photoresist (not individually illustrated in FIG.9) to the polymer layer 105 and then exposing the photoresist to apatterned energy source (e.g., a patterned light source) so as to inducea chemical reaction, thereby inducing a physical change in thoseportions of the photoresist exposed to the patterned light source. Adeveloper is then applied to the exposed photoresist to take advantageof the physical changes and selectively remove either the exposedportion of the photoresist or the unexposed portion of the photoresist,depending upon the desired pattern, and the underlying exposed portionof the polymer layer 105 are removed with, e.g., a dry etch process.However, any other suitable method for patterning the polymer layer 105may be utilized.

FIG. 10 illustrates a placement of a backside ball pad 1002 within thefirst openings 905 in order to protect the now exposed first vias 111.In an embodiment the backside ball pads 1002 may comprise a conductivematerial such as solder on paste or an oxygen solder protection (OSP),although any suitable material may be utilized. In an embodiment thebackside ball pads 1002 may be applied using a stencil, although anysuitable method of application may be utilized, and then reflowed inorder to form a bump shape.

FIG. 10 additionally illustrates a placement and patterning of abackside protection layer 1004 over the backside ball pads 1002,effectively sealing the joint between the backside ball pads 1002 andthe first vias 111 from intrusion by moisture. In an embodiment thebackside protection layer 1004 may be a protective material such as aPBO, Solder Resistance (SR), Lamination Compound (LC) tape, Ajinomotobuild-up film (ABF), non-conductive paste (NCP), non-conductive film(NCF), patterned underfill (PUF), warpage improvement adhesive (WIA),liquid molding compound V9, combinations of these, or the like. However,any suitable material may also be used. The backside protection layer1004 may be applied using a process such as screen printing, lamination,spin coating, or the like, to a thickness of between about 1 μm to about200 μm.

FIG. 10 also illustrates that, once the backside protection layer 1004has been placed, the backside protection layer 1004 may be patterned inorder to expose the backside ball pads 1002. In an embodiment thebackside protection layer 1004 may be patterned using, e.g., a laserdrilling method, by which a laser is directed towards those portions ofthe backside protection layer 1004 which are desired to be removed inorder to expose the backside ball pads 1002. During the laser drillingprocess the drill energy may be in a range from 0.1 mJ to about 30 mJ,and a drill angle of about 0 degree (perpendicular to the backsideprotection layer 1004) to about 85 degrees to normal of the backsideprotection layer 1004. In an embodiment the patterning may be formed toform openings over the backside ball pads 1002, and the openings may beformed to have a diameter of between about 30 μm and about 300 μm, suchas about 150 μm.

In another embodiment, the backside protection layer 1004 may bepatterned by initially applying a photoresist (not individuallyillustrated in FIG. 10) to the backside protection layer 1004 and thenexposing the photoresist to a patterned energy source (e.g., a patternedlight source) so as to induce a chemical reaction, thereby inducing aphysical change in those portions of the photoresist exposed to thepatterned light source. A developer is then applied to the exposedphotoresist to take advantage of the physical changes and selectivelyremove either the exposed portion of the photoresist or the unexposedportion of the photoresist, depending upon the desired pattern, and theunderlying exposed portion of the backside protection layer 1004 areremoved with, e.g., a dry etch process. However, any other suitablemethod for patterning the backside protection layer 1004 may beutilized.

FIG. 10 also illustrates a bonding of the backside ball pads 1002 to afirst package 1000 and a placement of a second underfill material 1020.In an embodiment the first package 1000 may comprise a third substrate1003, a third semiconductor device 1005, a fourth semiconductor device1007 (bonded to the third semiconductor device 1005), third contact pads1009, a second encapsulant 1011, and fifth external connections 1013. Inan embodiment the third substrate 1003 may be, e.g., a packagingsubstrate comprising internal interconnects (e.g., through substratevias 1015) to connect the third semiconductor device 1005 and the fourthsemiconductor device 1007 to the backside ball pads 1002.

In another embodiment, the third substrate 1003 may be an interposerused as an intermediate substrate to connect the third semiconductordevice 1005 and the fourth semiconductor device 1007 to the backsideball pads 1002. In this embodiment the third substrate 1003 may be,e.g., a silicon substrate, doped or undoped, or an active layer of asilicon-on-insulator (SOI) substrate. However, the third substrate 1003may be a glass substrate, a ceramic substrate, a polymer substrate, orany other substrate that may provide a suitable protection and/orinterconnection functionality. These and any other suitable materialsmay be used for the third substrate 1003.

The third semiconductor device 1005 may be a semiconductor devicedesigned for an intended purpose such as being a logic die, a centralprocessing unit (CPU) die, a memory die (e.g., a DRAM die), combinationsof these, or the like that is intended to be utilized with the secondsemiconductor device 301 (which may be part of a system on chip package.In an embodiment the third semiconductor device 1005 comprisesintegrated circuit devices, such as transistors, capacitors, inductors,resistors, first metallization layers (not shown), and the like,therein, as desired for a particular functionality. In an embodiment thethird semiconductor device 1005 is designed and manufactured to work inconjunction with or concurrently with the first semiconductor device201.

The fourth semiconductor device 1007 may be similar to the thirdsemiconductor device 1005. For example, the fourth semiconductor device1007 may be a semiconductor device designed for an intended purpose(e.g., a DRAM die) and comprising integrated circuit devices for adesired functionality. In an embodiment the fourth semiconductor device1007 is designed to work in conjunction with or concurrently with thefirst semiconductor device 201 and/or the third semiconductor device1005.

The fourth semiconductor device 1007 may be bonded to the thirdsemiconductor device 1005. In an embodiment the fourth semiconductordevice 1007 is only physically bonded with the third semiconductordevice 1005, such as by using an adhesive. In this embodiment the fourthsemiconductor device 1007 and the third semiconductor device 1005 may beelectrically connected to the third substrate 1003 using, e.g., wirebonds 1017, although any suitable electrical bonding may be utilized.

In an embodiment the fourth semiconductor device 1007 may be bonded tothe third semiconductor device 1005 both physically and electrically. Inthis embodiment the fourth semiconductor device 1007 may comprise sixthexternal connections (not separately illustrated in FIG. 10) thatconnect with seventh external connection (also not separatelyillustrated in FIG. 10) on the third semiconductor device 1005 in orderto interconnect the fourth semiconductor device 1007 with the thirdsemiconductor device 1005.

The third contact pads 1009 may be formed on the third substrate 1003 toform electrical connections between the third semiconductor device 1005and, e.g., the fifth external connections 1013. In an embodiment thethird contact pads 1009 may be formed over and in electrical contactwith electrical routing (such as through substrate vias 1015) within thethird substrate 1003. The third contact pads 1009 may comprise aluminum,but other materials, such as copper, may be used. The third contact pads1009 may be formed using a deposition process, such as sputtering, toform a layer of material (not shown) and portions of the layer ofmaterial may then be removed through a suitable process (such asphotolithographic masking and etching) to form the third contact pads1009. However, any other suitable process may be utilized to form thethird contact pads 1009. The third contact pads 1009 may be formed tohave a thickness of between about 0.5 μm and about 4 μm, such as about1.45 μm.

The second encapsulant 1011 may be used to encapsulate and protect thethird semiconductor device 1005, the fourth semiconductor device 1007,and the third substrate 1003. In an embodiment the second encapsulant1011 may be a molding compound and may be placed using a molding device(not illustrated in FIG. 10). For example, the third substrate 1003, thethird semiconductor device 1005, and the fourth semiconductor device1007 may be placed within a cavity of the molding device, and the cavitymay be hermetically sealed. The second encapsulant 1011 may be placedwithin the cavity either before the cavity is hermetically sealed orelse may be injected into the cavity through an injection port. In anembodiment the second encapsulant 1011 may be a molding compound resinsuch as polyimide, PPS, PEEK, PES, a heat resistant crystal resin,combinations of these, or the like.

Once the second encapsulant 1011 has been placed into the cavity suchthat the second encapsulant 1011 encapsulates the region around thethird substrate 1003, the third semiconductor device 1005, and thefourth semiconductor device 1007, the second encapsulant 1011 may becured in order to harden the second encapsulant 1011 for optimumprotection. While the exact curing process is dependent at least in parton the particular material chosen for the second encapsulant 1011, in anembodiment in which molding compound is chosen as the second encapsulant1011, the curing could occur through a process such as heating thesecond encapsulant 1011 to between about 100° C. and about 130° C., suchas about 125° C. for about 60 sec to about 3000 sec, such as about 600sec. Additionally, initiators and/or catalysts may be included withinthe second encapsulant 1011 to better control the curing process.

However, as one having ordinary skill in the art will recognize, thecuring process described above is merely an exemplary process and is notmeant to limit the current embodiments. Other curing processes, such asirradiation or even allowing the second encapsulant 1011 to harden atambient temperature, may be used. Any suitable curing process may beused, and all such processes are fully intended to be included withinthe scope of the embodiments discussed herein.

In an embodiment the fifth external connections 1013 may be formed toprovide an external connection between the third substrate 1003 and,e.g., the backside ball pads 1002. The fifth external connections 1013may be contact bumps such as microbumps or controlled collapse chipconnection (C4) bumps and may comprise a material such as tin, or othersuitable materials, such as silver or copper. In an embodiment in whichthe fifth external connections 1013 are tin solder bumps, the fifthexternal connections 1013 may be formed by initially forming a layer oftin through any suitable method such as evaporation, electroplating,printing, solder transfer, ball placement, etc, to a thickness of, e.g.,about 100 μm. Once a layer of tin has been formed on the structure, areflow is performed in order to shape the material into the desired bumpshape.

Once the fifth external connections 1013 have been formed, the fifthexternal connections 1013 are aligned with and placed into physicalcontact with the backside ball pads 1002, and a bonding is performed.For example, in an embodiment in which the fifth external connections1013 are solder bumps, the bonding process may comprise a reflow processwhereby the temperature of the fifth external connections 1013 is raisedto a point where the fifth external connections 1013 will liquefy andflow, thereby bonding the first package 1000 to the backside ball pads1002 once the fifth external connections 1013 resolidify.

FIG. 10 additionally illustrates the bonding of a second package 1019 tothe backside ball pads 1002. In an embodiment the second package 1019may be similar to the first package 1000, and may be bonded to thebackside ball pads 1002 utilizing similar processes. However, the secondpackage 1019 may also be different from the first package 1000.

Once the first package 1000 and the second package 1019 have beenbonded, the second underfill material 1020 may be placed in order tohelp protect the first package 1000 and the second package 1019 fromfurther environmental and operational stresses. In an embodiment thesecond underfill material 1020 may made from and dispensed similar tothe underfill material 521 described above with respect to FIG. 5, suchas by being a liquid epoxy dispensed using an injection method. However,any suitable material and method of dispensing may alternatively beutilized.

FIG. 11 illustrates a debonding of the third external connectors 601from the ring structure 901 and a singulation of the structure to form afirst integrated fan out package-on-package (InFO-POP) structure 1100.In an embodiment the third external connectors 601 may be debonded fromthe ring structure 901 by initially bonding the first package 1000 andthe second package 1019 to a second ring structure using, e.g., a secondultraviolet tape (not separately illustrated in FIG. 11). Once bonded,the ultraviolet tape 903 may be irradiated with ultraviolet radiationand, once the ultraviolet tape 903 has lost its adhesiveness, the thirdexternal connectors 601 may be physically separated from the ringstructure 901.

Once debonded, a singulation of the structure to form the first InFO-POPstructure 1100 is performed. In an embodiment the singulation may beperformed by using a saw blade (not shown) to slice through the firstencapsulant 401 and the polymer layer 105 between the first vias 111,thereby separating one section from another to form the first InFO-POPstructure 1100 with the second semiconductor device 301. However, as oneof ordinary skill in the art will recognize, utilizing a saw blade tosingulate the first InFO-POP structure 1100 is merely one illustrativeembodiment and is not intended to be limiting. Alternative methods forsingulating the first InFO-POP structure 1100, such as utilizing one ormore etches to separate the first InFO-POP structure 1100, may beutilized. These methods and any other suitable methods may be utilizedto singulate the first InFO-POP structure 1100.

FIG. 11 additionally illustrates a placement of the first InFO-POPstructure 1100 onto a printed circuit board (PCB) 1101. In an embodimentthe first InFO-POP structure 1100 may be bonded to the PCB 1101 byaligning the third external connector 601 and the fourth externalconnectors 603 (if remaining) with connections on the PCB 1101 (notseparately illustrated in FIG. 11). Once aligned, the third externalconnector 601 and the fourth external connectors 603 may be reflowed inorder to physically and electrically bond the PCB 1101 to the firstInFO-POP structure 1100. However, any suitable process may be used tobond the first InFO-POP structure 1100 to the PCB 1101.

FIGS. 12A-12B illustrate another embodiment in which, instead ofremoving only a single one of the fourth external connectors 603 (whichis sufficient to functionally remove the surface device 519 from theremainder of the structure), a second one of the fourth externalconnectors 603 (whose removal is illustrated by the dashed outline ofthe fourth external connector 603) may also be removed in order tocompletely electrically isolate the surface device 519, with FIG. 12Billustrating a close-up view of the dashed box 1201 in FIG. 12A. In thisembodiment the second one of the fourth external connectors 603 may belocated on an opposite side within the electrical circuit of the surfacedevice 519 from the first one of the fourth external connectors 603. Inan embodiment the second once of the fourth external connectors 603 maybe removed in a similar fashion as described above with respect to FIGS.8A-8B. For example, the second once of the fourth external connectors603 may be removed using a desoldering process such as a heat gun and asuction pump in order to electrically disconnect the first section 515and the second section 517 within the terminal UBM 513. However, anysuitable desoldering process may be utilized.

By removing a second fourth external connector 603, additional ones orall of the electrical connections between the surface device 519 and theterminal RDL 505 and, hence, the remainder of the structure, may beremoved, and the surface device 519 may be completely isolatedelectrically. By completely isolating the surface device 519, thesurface device 519 (which has been tested to be defective) may befunctionally removed from service without also being physically removed,thereby avoiding the expensive and inefficient process of physicallyremoving the surface device 519.

FIG. 13 illustrates an embodiment that may be used to save additionalspace on the surface of the structure. In this embodiment the surfacedevice 519 is electrically connected on a first side to a first UBM 511with an overlying third external connector 601 and is electricallyconnected on a second side to a terminal UBM 513 with an overlyingfourth external connector 603. However, in this embodiment at least oneof the terminal UBMs 513 and up to all of the terminal UBMs 513, may bemanufactured such that the at least one terminal UBM 513 has a smallerdimension than the first UBMs 511. For example, in an embodiment theterminal UBMs 513 with the smaller dimension may have a surface area(when viewed from a top down perspective) of less than or equal to about60% of the UBMs 511. In another embodiment in which the first UBMs 511have a diameter that is the first distance D₁ of between about 150 μmand about 250 μm, the at least one terminal UBM 513 may have a diameteracross both the first section 515 and the second section 517 of a fourthdistance D₄ of between about 100 μm and about 150 μm. However, anysuitable dimensions may also be utilized.

FIG. 14 illustrates a top down view of one embodiment of the surfacedevice 519 that is electrically connected to one terminal UBM 513 withthe first section 515 and the second section 517, with each of the firstsection 515 and the second section 517 having the half-circle shapes asdescribed above. As can be seen in this top-down figure, the surfacedevice 519 is connected to the terminal UBM 513 through the terminal RDL505 (shown in FIG. 14 as being under the fourth passivation layer 509with the dashed lines and, after the surface device 519 has been testedand been found defective or otherwise unusable, the fourth externalconnector 603 that had been attached to the terminal UBM 513 has beenremoved in order to disconnect the surface device 519 from the rest ofthe device.

FIG. 15 illustrates another embodiment in which the surface device 519,instead of taking up UBM spaces that would otherwise connect to aprinted circuit board (not separately illustrated) and hinder theability to route on that side, are instead placed between the firstsemiconductor device 201 or the second semiconductor device 301 and thefirst package 1000 in order to prevent the hindrance of the routingability. In an embodiment the surface device 519 may be placed so as tobe connected to a second RDL 1501 on an opposite side of the firstsemiconductor device 201 and the second semiconductor device 301 fromthe third external connectors 601.

In an embodiment the second RDL 1501 may be formed by initially removingthe polymer layer 105 from over the first semiconductor device 201 andthe second semiconductor device 301. In an embodiment the removal of thepolymer layer 105 may be performed using, e.g., an etch back processwhereby etchants are utilized to remove the polymer layer 105 until thefirst vias 111 have been exposed. For example, in an embodiment in whichthe polymer layer 105 is PBO, an etchant may be utilized in a wet etchprocess to remove the polymer layer 105.

However, as one of ordinary skill in the art will recognize, the wetetch process described above is intended to be illustrative and is notintended to limit the embodiments. Rather, any suitable removal process,such as a chemical mechanical polish or a low debond energy process maybe used in order to save costs related to the protection layer. All suchprocesses are fully intended to be included within the scope of theembodiments.

Once the first vias 111, the first semiconductor device 201, and thesecond semiconductor device 301 have been exposed, the second RDL 1501may be formed to interconnect the first vias 111 and the subsequentlyformed fifth external connections 1013 (not seen in this embodimentillustrated in FIG. 15 but illustrated below with respect to FIGS.16A-16B). In an embodiment the second RDL 1501 may be formed asdescribed above with respect to the first RDL 501. For example, a seedlayer may be formed, a photoresist may be placed and patterned over theseed layer, and the second RDL 1501 may be plated onto the seed layerwithin the openings of the photoresist before the photoresist isremoved.

Once the second RDL 1501 has been formed, a fifth passivation layer 1503may be formed over the second RDL 1501 in order to protect the secondRDL 1501. In an embodiment the fifth passivation layer 1503 may be ofsimilar materials and formed using similar processes as the thirdpassivation layer 503, although the fifth passivation layer 1503 mayalso be formed of any suitable methods by any suitable processes.

Additionally, while only a single one of the second RDL 1501 and thefifth passivation layer 1503 are illustrated in FIG. 15, this isintended to be illustrative and is not intended to be limiting. Rather,if desired, additional RDL layers and passivation layers (not separatelyillustrated in FIG. 15) may also be formed after the second RDL 1501 andthe fifth passivation layer 1503 have been formed. Any suitable numberof RDL layers and passivation layers may be utilized, and all suchnumbers are fully intended to be included within the scope of theembodiments.

Once the second RDL 1501 and the fifth passivation layer 1503 have beenformed, a sixth passivation layer 1505 may be formed to protect thesecond RDL 1501 along with the other underlying structures. In anembodiment the sixth passivation layer 1505 may be similar to the thirdpassivation layer 503. For example, the sixth passivation layer 1505 maybe PBO placed using, e.g., a spin-on process. However, any suitablematerial or method of manufacture may be utilized.

Once the sixth passivation layer 1505 has been formed, the sixthpassivation layer 1505 is patterned in order to expose portions of thesecond RDL 1501 for further connections. In an embodiment the sixthpassivation layer 1505 may be patterned as described above with respectto the patterning of the polymer layer 105 described in FIG. 9. Forexample, the sixth passivation layer 1505 may be patterned using a laserpatterning process or a photolithographic masking and etching process,although any suitable patterning process may be utilized.

After the sixth passivation layer 1505 has been patterned, the surfacedevice 519 may be mounted over the sixth passivation layer 1505 and inelectrical contact with the second RDL 1501. In an embodiment thesurface device 519 may be mounted as described above with respect toFIG. 5A. For example, flux may be applied to the surface device 519using a flux dip, the surface device 519 may be positioned using a pickand place process, a reflow may be performed, and the flux may becleaned. However, any suitable method of mounting and bonding thesurface device 519 may be utilized.

Optionally in this embodiment, second UBMs and second terminal UBMs (notseparately illustrated in FIG. 15) may be formed within the openings ofthe sixth passivation layer 1505 in order to form the fuse line so that,if the surface device 519 does not pass a test the surface device 519may be electrically removed from the remainder of the structure. In anembodiment the second UBMs and the second terminal UBMs may be formed asdescribed above with respect to the first UBMs 511 and the terminal UBMs513. Additionally, the second terminal UBMs may be utilized to connect,test and, if desired after testing, electrically disconnect the surfacedevice 519 from the remainder of the structure without physicallyremoving the surface device 519.

FIGS. 16A-16B illustrate that, once the surface device 519 has beenmounted, the first package 1000 may be mounted in electrical connectionwith the second RDL 1501. In this embodiment the surface device 519 islocated between the second RDL 1501 and the first package 1000. Thefirst package 1000 may be mounted as described above with respect toFIG. 10, although any suitable method of bonding the first package 1000may be utilized. By mounting the surface device 519 between the firstpackage 1000 and the second RDL 1501, additional space on an oppositeside of the first vias 111 is not taken up, and additional routing andconnectivity on that side may be achieved.

FIG. 16B illustrates a top-down view of one embodiment in which thesurface device 519 has been mounted between the first package 1000 andthe second RDL 1501. As can be seen the surface device 519 may bemounted in a region that is not crowded with external connectors, suchas the fifth external connections 1013 and the third external connectors601. In particular, the surface device 519 is located on an oppositeside of the encapsulant 401 from the third external connectors 601, andthe fifth external connections 1013 may be arranged along an exteriorregion of the package 1000, allowing the surface device 519 to be placedin an interior region of the package 1000. As such, the surface device519 may be located in a region without having to reduce or interferewith the placement of any of the external connectors, thereby increasingthe overall efficiency and ability to route and place externalconnectors.

FIGS. 17A-17B illustrate an embodiment in which the third substrate 1003is customized in order to better accept the presence of the surfacedevice 519, with FIG. 17B illustrating a top-down view of FIG. 17A alongline B-B′. In this embodiment a slot 1701 is formed within the thirdsubstrate 1003 so as to ensure that the presence of the surface device519 does not adversely affect the bonding of the first package 1000. Inan embodiment the slot 1701 may be formed by applying a photoresist (notseparately illustrated) to the third substrate 1003 prior to bonding thefirst package 1000. Once the photoresist has been applied, thephotoresist may be patterned in order to expose the region of the thirdsubstrate 1003 where the slot 1701 is desired, and an anisotropic etchsuch as a reactive ion etch is performed using the patterned photoresistas a mask in order to form the slot 1701.

In an embodiment the slot 1701 is formed in order to have a shape thataccommodates the surface device 519. As such, as illustrated in FIG.17B, which illustrates the second encapsulant 1011 along with only theslot 1701 and the surface device 519 for clarity, while the size andshape of the slot 1701 is dependent at least in part on the size andshape of the surface device 519, in an embodiment in which the surfacedevice 519 has a first length L₁ of about 0.4 mm and a first width W₁ ofabout 0.2 mm, the slot 1701 may have a second length L₂ of between about0.5 mm and about 10 mm, and may have a second width W₂ of between about0.5 mm and about 10 mm. Additionally, in an embodiment in which thesurface device 519 has a first height H₁ (over the sixth passivationlayer 1505) of between about 20 μm and about 100 μm, the slot 1701 mayhave a second height H₂ of between about 20 μm and about 150 μm. Byforming the slot 1701 the surface device 519 may be placed between thesixth passivation layer 1505 and the first package 1000 withoutinterfering with the spacing between the sixth passivation layer 1505and the first package 1000 and will not cause additional problems.

FIG. 18 illustrates yet another embodiment in which the surface device519 is connected directly to the first vias 111 instead of beingconnected to a redistribution layer. In this embodiment the second RDL1501 is not formed, and the openings are formed through the polymerlayer 105. However, in this embodiment two of the first vias 111 arelocated, formed, and exposed so that the surface device 519 may bemounted directly to the first vias 111 and not to an underlyingredistribution layer. The first vias 111 directly connect the surfacedevice 519 to the first RDL 501, although the surface device 519 islocated between the first vias 111 and the first package 1000. Byconnecting directly to the first vias 111, the manufacturing of thesecond RDL 1501 may be avoided and the overall manufacturing process maybe simplified.

FIG. 19 illustrates yet another embodiment in which the surface device519 is utilized in a multi-fan out process of manufacturing asemiconductor device. In this embodiment a fifth semiconductor device1901 may be placed alongside the first semiconductor device 201 and asixth semiconductor device 1903 may be placed alongside the secondsemiconductor device 301. The fifth semiconductor device 1901 and thesixth semiconductor device 1903 may be similar to the firstsemiconductor device 201 and the second semiconductor device 301, andmay be designed to work in conjunction with the first semiconductordevice 201 or the second semiconductor device 301.

Once in place, the first vias 111, the first semiconductor device 201,the second semiconductor device 301, the fifth semiconductor device 1901and the sixth semiconductor device 1903 are encapsulated with the firstencapsulant 401, planarized, and the first RDL 501 is formed. In anembodiment the first encapsulant 401 may be applied and planarized asdescribed above with respect to FIG. 4. For example, the firstsemiconductor device 201, the second semiconductor device 301, the fifthsemiconductor device 1901 and the sixth semiconductor device 1903 may beplaced into a molding chamber and the first encapsulant 401 isintroduced and then cured prior to a process such as a chemicalmechanical polishing process being used to planarize the firstencapsulant 401 and expose the first vias 111, the first semiconductordevice 201, the second semiconductor device 301, the fifth semiconductordevice 1901 and the sixth semiconductor device 1903.

Once planarized, the first RDL 501 may be formed in electricalconnection with the first vias 111, the first semiconductor device 201,the second semiconductor device 301, the fifth semiconductor device 1901and the sixth semiconductor device 1903. In an embodiment the first RDL501 may be formed as described above with respect to FIG. 5. Forexample, a seed layer may be applied, a photoresist is deposited andpatterned over the seed layer, conductive material is deposited into thephotoresist, the photoresist is removed, and exposed portions of theseed layer are removed. However, any suitable process may be utilized.

Once the first RDL 501 has been formed, the third passivation layer 503may be formed in order to protect the first RDL 501, and the thirdpassivation layer 503 may be patterned in order to expose portions ofthe first RDL 501 for further processing. After the third passivationlayer 503 has been formed, second vias 1902 may be formed in electricalconnection with the first RDL 501. In an embodiment the second vias 1902may be formed in a similar fashion as the first vias 111 described abovewith respect to FIG. 1. For example, in one embodiment a seed layer isdeposited, a photoresist is deposited and patterned over the seed layer,conductive material is deposited into the photoresist, the photoresistis removed, and exposed portions of the seed layer are removed. However,any suitable method may be utilized to form the second vias 1902.

After the second vias 1902 have been formed, a seventh semiconductordevice 1905 may be placed between the second vias 1902 over the firstsemiconductor device 201 and the fifth semiconductor device 1901 and aneighth semiconductor device 1907 may be placed between the second vias1902 over the second semiconductor device 301 and the sixthsemiconductor device 1903. In an embodiment the seventh semiconductordevice 1905 and the eighth semiconductor device 1907 may be similar toany of the first semiconductor device 201, the second semiconductordevice 301, the fifth semiconductor device 1901 or the sixthsemiconductor device 1903, and may be configured to work in conjunctionwith each other as desired for a particular functionality.

The seventh semiconductor device 1905 and the eighth semiconductordevice 1907 may be placed in a similar fashion as the firstsemiconductor device 201 and the second semiconductor device 301. Forexample, the seventh semiconductor device 1905 and the eighthsemiconductor device 1907 may be placed using a pick and place process.However, any suitable method of placing the seventh semiconductor device1905 and the eighth semiconductor device 1907 may be utilized.

After the second vias 1902 have been formed and the seventhsemiconductor device 1905 and the eighth semiconductor device 1907 havebeen placed, the second vias 1902, the seventh semiconductor device 1905and the eighth semiconductor device 1907 may be encapsulated with athird encapsulant 1909. In an embodiment the third encapsulant 1909 maybe similar to the first encapsulant 401, such as by being a moldingcompound, although any suitable material may be used.

In an embodiment the third encapsulant 1909 may be placed in a mannersimilar to the manner in which the first encapsulant 401 was placed asdescribed above with respect to FIG. 4. For example, the second vias1902, the seventh semiconductor device 1905 and the eighth semiconductordevice 1907 may be placed (along with the first RDL 501 and otherunderlying structures) into a molding chamber, and the third encapsulant1909 may be introduced to encapsulate the second vias 1902, the seventhsemiconductor device 1905 and the eighth semiconductor device 1907 alongwith the first RDL 501, the first semiconductor device 201, the secondsemiconductor device 301, and the first encapsulant 401, with the thirdencapsulant 1909 being in physical contact with the third encapsulant1909. Once in place, the third encapsulant 1909 may be cured.

After the third encapsulant 1909 has been cured, the third encapsulant1909 may be planarized in order to remove excess material and also toform a planar surface with the second vias 1902, the seventhsemiconductor device 1905 and the eighth semiconductor device 1907. Inan embodiment the third encapsulant 1909 is planarized as describedabove with respect to FIG. 4. For example, a chemical mechanicalpolishing process may be utilized to planarize the third encapsulant1909, although any suitable planarization process may be utilized.

Once planarized, a series of third RDLs 1911 and seventh passivationlayers 1913 may be formed over the third encapsulant 1909 and utilizedto electrically connect the seventh semiconductor device 1905, theeighth semiconductor device 1907, and the second vias 1902. In anembodiment the third RDL 1911 and the seventh passivation layers 1913may be formed with similar materials and using similar processes asdescribed above with respect to the first RDL 501 and the fourthpassivation layer 509, although any suitable materials and methods ofmanufacture may be used. Once a first one of the third RDLs 1911 and theseventh passivation layers 1913 has been formed, the process may berepeated to form another one of the third RDLs 1911 and the seventhpassivation layers 1913. Additionally, while multiple ones of the thirdRDLs 1911 and the seventh passivation layers 1913 have been illustratedin FIG. 19, any suitable number of third RDLs 1911 and the seventhpassivation layers 1913 may be formed, including a single one of thethird RDLs 1911 and the seventh passivation layers 1913.

Once the third RDLs 1911 and the seventh passivation layers 1913 havebeen formed, third UBMs 1915 may be formed in electrical connection withthe third RDLs 1911. In an embodiment the third UBMs 1915 are formed ofsimilar materials and with similar processes as the first UBMs 511described above with respect to FIG. 5. However, any suitable materialsor methods of manufacture may be used to form the third UBMs 1915.

Once the third RDL 1911 has been formed, the third external connectors601 may be placed in electrical connection with the third UBMs 1915. Inan embodiment the third external connectors 601 may be placed asdescribed above with respect to FIG. 6. For example, the third externalconnectors 601 may be a ball grid array formed using a direct ball dropprocess, although any suitable method of manufacture may be utilized.

FIG. 20 illustrates a placement of the structure of FIG. 19 onto thering structure 901 and the ultraviolet tape 903 and a removal of thecarrier substrate 101. In an embodiment the carrier substrate 101 may beremoved as described above with respect to FIG. 9. For example, theadhesive layer 103 may irradiated and heated using, e.g., ultravioletlight until the adhesive layer 103 loses at least some of its adhesiveproperties, at which point the carrier substrate 101 and the adhesivelayer 103 are removed. However, any suitable process for removing thecarrier substrate 101 may be used.

Once the carrier substrate 101 and the adhesive layer 103 have beenremoved, the now exposed polymer layer 105 may be patterned in order toexpose the first vias 111. In an embodiment the polymer layer 105 may bepatterned as described above with respect to FIG. 9. For example, alaser drilling method may be used to form first openings 905 through thepolymer layer 105 such that the first vias 111 (including the first seedlayer 107) are exposed for further processing. However, any suitablemethod of patterning the polymer layer 105 may be utilized.

FIG. 20 also illustrates that, once the first vias 111 have been exposedthrough the polymer layer 105, the surface devices 519 may be placed toextend through the first openings 905 through the polymer layer 105 andbonded in electrical connection with the first vias 111. In anembodiment the surface devices 519 may be bonded as described above withrespect to FIGS. 5A-5B. For example, the surface devices 519 may bebonded by sequentially dipping connectors such as solder balls of thesurface device 519 into flux, using a pick-and-place tool in order tophysically align the connectors of the surface device 519 withindividual ones of the first vias 111, and reflowing the connectors suchthat the surface devices 519 are bonded to the first vias 111.Optionally, the first UBMs 511 may be formed in physical contact withthe first vias 111 and the surface devices 519 may be bonded to thefirst UBMs 511.

FIG. 21 illustrates a singulation into a first multi-fan out package2100. In an embodiment the singulation may be performed as describedabove with respect to FIG. 11. For example, a saw blade may be used tocut through the first encapsulant 401 and the third encapsulant 1909between the first vias 111 and the second vias 1902 in order to form thefirst multi-fan out package 2100. However, any suitable method ofsingulating the structure into the first multi-fan out package 2100 maybe utilized.

By utilizing the surface devices 519 within the multi-fan out package2100, greater flexibility in the placement of the surface devices 519may be obtained. Additionally, with the optional inclusion of theterminal UBMs 519 (not separately illustrated) along with the multi-fanout package 2100, the surface devices 519 that fail testing may befunctionally removed.

In accordance with an embodiment, a method of manufacturing asemiconductor device comprising applying a first external connector to afirst underbump metallization over a substrate is provided. A secondexternal connector is applied to a first terminal underbumpmetallization, wherein the second external connector electricallybridges a first section of the first terminal underbump metallizationand a second section of the first terminal underbump metallization thatwere electrically isolated prior to the applying the second externalconnector. The second external connector is removed without removing thefirst external connector, and an external device is bonded to the firstexternal connector after the removing the second external connector,wherein the bonding is performed while the first section and the secondsection are electrically isolated from each other.

In accordance with another embodiment, a semiconductor device comprisingvias that extend through an encapsulant and are separated from asemiconductor device by the encapsulant is provided. A passivation layeris over the vias, the encapsulant, and the semiconductor device, and asurface device is located over the passivation layer. A semiconductorpackage is located over the surface device such that the surface deviceis between the passivation layer and the semiconductor package.

In accordance with yet another embodiment, a semiconductor devicecomprising a first redistribution layer and a first semiconductor devicelocated on a first side of the first redistribution layer is provided. Asecond semiconductor device is located on a second side of the firstredistribution layer opposite the first side of the first redistributionlayer. A first via extends away from the first redistribution layer in afirst direction, wherein the first via is separated from the firstsemiconductor device by a first encapsulant. A second via extends awayfrom the first redistribution layer in a second direction opposite thefirst direction, wherein the second via is separated from the secondsemiconductor device by a second encapsulant, wherein the first viaextends through the first encapsulant, the second via extends throughthe second encapsulant, and the second encapsulant is in physicalcontact with the first encapsulant. A first surface mount device isbonded to the first via.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A method of manufacturing a semiconductor device,the method comprising: applying a first external connector to a firstunderbump metallization over a substrate: applying a second externalconnector to a first terminal underbump metallization, wherein thesecond external connector electrically bridges a first section of thefirst terminal underbump metallization and a second section of the firstterminal underbump metallization that were electrically isolated priorto the applying the second external connector; removing the secondexternal connector without removing the first external connector; andbonding an external device to the first external connector after theremoving the second external connector, wherein the bonding is performedwhile the first section and the second section are electrically isolatedfrom each other.
 2. The method of claim 1, further comprising bonding asurface device in electrical connection with the second section of theterminal underbump metallization, prior to the removing the secondexternal connector.
 3. The method of claim 2, further comprising testingthe surface device after the bonding the surface device and before theremoving the second external connector, wherein the removing the secondexternal connector is performed when the surface device fails thetesting the surface device.
 4. The method of claim 3, wherein thesurface device is located between the external device and the substrateafter the bonding the external device to the first external connector.5. The method of claim 1, further comprising: applying a third externalconnector to a second terminal underbump metallization, wherein thethird external connector electrically bridges a third section of thesecond terminal underbump metallization and a fourth section of thesecond terminal underbump metallization that were electrically isolatedprior to the applying the third external connector; and removing thethird external connector without removing the first external connector.6. The method of claim 1, wherein the first underbump metallization hasa different dimension than the first terminal underbump metallization.7. The method of claim 1, wherein the first section and the secondsection are separated by a distance of at least 10 μm.
 8. A method ofmanufacturing a semiconductor device, the method comprising: forming aredistribution layer over a semiconductor device and vias, wherein thevias extend through an encapsulant and are separated from thesemiconductor device by the encapsulant; bonding a surface device to bein electrical connection with a first portion of the redistributionlayer, wherein the first portion is electrically separated from a secondportion of the redistribution layer; electrically connecting the firstportion of the redistribution layer with the second portion of theredistribution layer by applying a solder ball; testing the surfacedevice; electrically disconnecting the first portion of theredistribution layer from the second portion of the redistribution layerby removing the solder ball when the surface device fails the test; andbonding an external device in electrical connection with theredistribution layer, wherein the surface device remains between theredistribution layer and the external device.
 9. The method of claim 8,wherein the electrically connecting the first portion of theredistribution layer with the second portion of the redistribution layerby applying the solder ball further comprises applying the solder ballto electrically bridge a first section of an underbump metallizationwith a second section of the underbump metallization physicallyseparated from the first section of the underbump metallization.
 10. Themethod of claim 9, further comprising a second underbump metallization,wherein the second underbump metallization and the first underbumpmetallization have a same width.
 11. The method of claim 9, furthercomprising a second underbump metallization, wherein the secondunderbump metallization and the first underbump metallization havedifferent widths.
 12. The method of claim 11, wherein the secondunderbump metallization has a larger width than the first underbumpmetallization.
 13. The method of claim 8, further comprising,electrically disconnecting a third portion of the redistribution layerand a fourth portion of the redistribution layer by removing a secondsolder ball when the surface device fails the test.
 14. The method ofclaim 8, wherein the removing the first solder ball is performed with adesoldering process.
 15. A method of manufacturing a semiconductordevice, the method comprising: encapsulating a first semiconductordevice and a first via with an encapsulant, wherein the firstsemiconductor device is separated from the first via by the encapsulant;forming a redistribution layer over the first semiconductor device, thefirst via, and the encapsulant, wherein a first portion of theredistribution layer is electrically isolated from a second portion ofthe redistribution layer; bonding a surface device over the firstportion of the redistribution layer; and bonding an external device overthe surface device and in electrical connection with the second portionof the redistribution layer, wherein the surface device remains bondedover the first portion of the redistribution layer, and is electricallyseparated from the external device after the surface device fails adevice test.
 16. The method of claim 15, wherein the external devicefurther comprises: a substrate; through vias extending through thesubstrate; and a second semiconductor device bonded to the substrate andelectrically connected to the through vias.
 17. The method of claim 16,wherein the substrate has an opening located over the surface device.18. The method of claim 15, wherein the surface device is electricallyconnected to the first via.
 19. The method of claim 15, wherein thesurface device is electrically connected to the second portion of theredistribution layer during the device test.
 20. The method of claim 15,further comprising a second redistribution layer on an opposite side ofthe encapsulant from the redistribution layer.